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| NTB5404N, NTP5404N 40 V, 136 A, Single N-Channel, D2PAK & TO-220 Features Power MOSFET * * * * Low RDS(on) High Current Capability Low Gate Charge This is a Pb-Free Device http://onsemi.com V(BR)DSS 40 V RDS(ON) TYP 3.5 m @ 10 V D ID MAX (Note 1) 136 A Applications * Electronic Brake Systems * Electronic Power Steering * Bridge Circuits MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current - RqJC (Note 1) Power Dissipation - RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 20 136 96 167 258 -55 to 175 75 1000 W A 1 Units V V A N-Channel G S MARKING DIAGRAMS 2 3 D2PAK CASE 418B STYLE 2 NTB5404NG AYWW tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain-to Source Avalanche Energy - (VDD = 50 V, VGS = 10 V, IPK = 45 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A mJ TO-220AB CASE 221A STYLE 5 1 4 1 TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NTP5404NRG AYWW 2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Symbol RJC Max 0.9 Units C/W 3 = Pb-Free Device = Assembly Location = Year = Work Week 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). G A Y WW ORDERING INFORMATION Device NTB5404NT4G NTP5404NRG Package D2PAK (Pb-Free) TO-220 (Pb-Free) 50 Units / Rail Shipping 800 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 July, 2010 - Rev. 2 1 Publication Order Number: NTB5404N/D NTB5404N, NTP5404N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 20 A TJ = 25C TJ = 125C VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 W VGS = 10 V, VDD = 32 V, ID = 40 A, RG = 2.5 W VGS = 10 V, VDS = 32 V, ID = 40 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V VGS = 10 V, ID = 40 A VGS = 5.0 V, ID = 15 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge 4300 1075 450 125 5.5 12.5 55 7000 1700 1000 nC pF VDS = 10 V, ID = 15 A VGS = 0 V, VDS = 40 V TJ = 25C TJ = 100C VGS = 0 V, ID = 250 mA 40 34 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 30 V VGS = VDS, ID = 250 mA 1.5 -8.2 3.5 5.1 35 3.5 V mV/C 4.5 7.0 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10 65 85 85 ns SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 25 175 46 62 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 20 A 0.8 0.65 75 38 38 140 nC ns 1.1 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTB5404N, NTP5404N TYPICAL PERFORMANCE CURVES 200 ID, DRAIN CURRENT (AMPS) 175 150 125 100 75 50 25 0 0 1 2 3 4 5 6 7 VGS = 8 V to 10 V 7V 6V 5V 4.8 V 4.6 V 4.4 V 4.2 V 4V 3.8 V 8 9 10 TJ = 25C ID, DRAIN CURRENT (AMPS) 200 175 150 125 100 75 50 25 0 0 TJ = 25C TJ = 125C VDS 10 V TJ = -55C 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 6 7 8 9 3 5 4 1 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.01 ID = 40 A TJ = 25C 0.01 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 20 30 Figure 2. Transfer Characteristics 0.009 0.008 TJ = 25C 0.007 0.006 0.005 0.004 0.003 3 4 5 6 7 8 9 10 VGS = 5 V VGS = 10 V 0.002 40 50 60 70 80 90 100 110 120 130 140 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2.2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 10 100000 ID = 40 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 175C 1000 TJ = 100C 100 4 8 12 16 20 24 28 32 36 40 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTB5404N, NTP5404N TYPICAL PERFORMANCE CURVES 12000 10000 C, CAPACITANCE (pF) 8000 6000 4000 Coss 2000 0 10 Crss 5 0 5 VGS VDS 10 15 20 25 30 35 40 Crss Ciss TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V Ciss 12 10 8 6 QGS 4 2 0 0 20 ID = 40 A TJ = 25C 80 100 120 40 60 QG, TOTAL GATE CHARGE (nC) QGD VDS QT VGS 36 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 24 18 12 6 0 140 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 VDS = 32 V ID = 40 A VGS = 10 V t, TIME (ns) 100 40 IS, SOURCE CURRENT (AMPS) tf tr td(on) 35 30 25 20 15 10 5 0 0.4 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge td(off) VGS = 0 V TJ = 25C 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.5 0.7 0.6 0.8 0.9 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 ms 1 ms VGS = 10 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 10 ms dc 10 1 0.1 0.1 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTB5404N, NTP5404N r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (s) 0.1 t1 P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0 10 Figure 12. Thermal Response http://onsemi.com 5 NTB5404N, NTP5404N PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE K C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN VARIABLE CONFIGURATION ZONE L M SOLDERING FOOTPRINT* 10.49 8.38 16.155 F VIEW W-W 2X 3.504 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS 2X *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB5404N, NTP5404N PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTB5404N/D |
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